DG858DW45 Datasheet, PDF (3/7 Pages) Dynex Semiconductor – Gate Turn-Off Thyristor

CHARACTERISTICS
T_j = 125^oC unless stated otherwise
Symbol
Parameter
V
TM
I_DM
I_RRM
V_GT
I_GT
I_RGM
E_ON
t
d
t
r
E_OFF
t_gs
t_gf
t_gq
Q
GQ
Q_GQT
I_GQM
On-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Reverse gate cathode current
Turn-on energy
Delay time
Rise time
Turn-off energy
Storage time
Fall time
Gate controlled turn-off time
Turn-off gate charge
Total turn-off gate charge
Peak reverse gate current
RELIABILITY
DC blocking reliability
DG858DW45
Conditions
At 3000A peak, I_G(ON) = 10A d.c.
V_DRM = 4500V, V_RG = 2V
At V_RRM
V_D = 24V, I_T = 100A, T_j = 25^oC
V_D = 24V, I_T = 100A, T_j = 25^oC
V_RGM = 16V, No gate/cathode resistor
V = 2000V
D
I_T = 3000A, dI_T/dt = 300A/µs
I_FG = 40A, rise time < 1.0µs
I = 3000A, V = 4200V
T
DM
Snubber Cap Cs = 4.0µF,
di_GQ/dt = 40/µs
Min. Max. Units
- 3.85 V
- 100 mA
-
50 mA
- 1.2 V
- 4.0 A
-
50 mA
- 4400 mJ
-
2.0 µs
-
6.0 µs
- 12500 mJ
-
26 µs
-
2.5 µs
- 28.5 µs
- 12500 µC
- 25000 µC
- 950 A
Conditions
V = 3500V, T = -40 to + 125˚C,
dc
j
ambient cosmic radiation at sea level, in
open air, 100% duty cycle.
Limit Units
100 FIT
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