DG858DW45 Datasheet, PDF (1/7 Pages) Dynex Semiconductor – Gate Turn-Off Thyristor

Replaces July 1999 version, DS4334-4.0
DG858DW45
DG858DW45
Gate Turn-Off Thyristor
DS4334-4.1 May 2000
FEATURES
q Double Side Cooling
q High Reliability In Service
q High Voltage Capability
q Fault Protection Without Fuses
q High Surge Current Capability
q Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces
Acoustic Cladding Necessary For Environmental
Requirements
KEY PARAMETERS
I_TCM
V_DRM
I_T(AV)
dV_D/dt
dI_T/dt
3000A
4500V
1100A
750V/µs
300A/µs
APPLICATIONS
q Variable speed A.C. motor drive inverters (VSD-AC).
q Uninterruptable Power Supplies
q High Voltage Converters.
q Choppers.
q Welding.
q Induction Heating.
q DC/DC Converters.
VOLTAGE RATINGS
Type Number
DG858DW45
Repetitive Peak Off-state
Voltage
V_DRM
V
4500
Package outline type code : W
See Package Details for further information.
Fig.1 Package outline
Repetitive Peak Reverse
Voltage
V_RRM
V
16
Conditions
T_vj = 125^oC, I_DRM =100mA,
I_RRM = 50mA
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
I_TCM
Repetitive peak controllable on-state current ^VD ^{= V}DRM^{, T}j ^{= 125oC, di}GQ^{/dt = 40A/µs,}
Cs = 4.0µF, L_S ≤ 200nH
3000
I_T(AV) Mean on-state current
T = 80oC. Double side cooled, half sine 50Hz. 1100
HS
I
RMS on-state current
T(RMS)
T = 80oC. Double side cooled, half sine 50Hz. 1720
HS
Units
A
A
A
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