DG646BH25_15 Datasheet, PDF (3/14 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

SEMICONDUCTOR
CHARACTERISTICS
T_j = 125°C unless stated otherwise
Symbol
Parameter
VTM
IDM
IRRM
VGT
IGT
IRGM
EON
td
tr
EOFF
tgs
tgf
tgq
QGQ
QGQT
IGQM
On-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Reverse gate cathode current
Turn-on energy
Delay time
Rise time
Turn-off energy
Storage time
Fall time
Gate controlled turn-off time
Turn-off gate charge
Total turn-off gate charge
Peak reverse gate current
DG646BH25
Test Conditions
Min
.
Max.
Units
At 2000A peak, IG(ON) = 7A dc
-
2.6
V
VDRM = 2500V, VRG = 0V
-
100
mA
At VRRM
-
50
mA
VD = 24V, IT = 100A, Tj = 25°C
VD = 24V, IT = 100A, Tj = 25°C
-
1.0
V
-
3.0
A
VRGM = 16V, No gate/cathode resistor -
50
mA
VD = 1500V
IT = 2000A, dIT/dt = 300A/s
IFG = 30A, rise time < 1.0s
-
1188
mJ
-
1.2
s
-
3.0
s
-
4000
mJ
IT = 2000A,
VDM = 2500V,
Snubber capacitor CS = 2.0F,
diGQ/dt = 40A/s
-
17.0
s
-
2.0
s
-
19.0
s
-
6600
C
- 13200 C
-
650
A
3/3
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