DG646BH25_15 Datasheet, PDF (2/14 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

SEMICONDUCTOR
DG646BH25
SURGE RATINGS
Symbol
Parameter
Test Conditions
Max. Units
ITSM
I²t
diT/dt
dVD/dt
LS
Surge (non repetitive) on-state current
I²t for fusing
Critical rate of rise of on-state current
Rate of rise of off-state voltage
Peak stray inductance in snubber
circuit
10ms half sine. Tj = 125°C
10ms half sine. Tj = 125°C
VD = 1500V, IT = 2000A, Tj = 125°C, IFG > 30A,
Rise time > 1.0 s
To 66% VDRM; RGK  1.5, Tj = 125°C
To 66% VDRM; VRG  -2V, Tj = 125°C
IT = 2000A, VDM = 2500V, Tj = 125°C, diGQ/dt = 40A/s,
CS = 2.0F
GATE RATINGS
18.0
16.2
300
135
1000
200
kA
MA²s
A/s
V/s
V/s
nH
Symbol
Parameter
VRGM
IFGM
PFG(AV)
PRGM
diGQ/dt
tON(min)
tOFF(min)
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissible on time
Minimum permissible off time
Test Conditions
This value may be exceeded during turn-off
Min. Max. Units
-
16
V
20 100
A
-
15
W
-
19
kW
30
60 A/s
50
-
s
100
-
s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Rth(j-hs)
Thermal resistance – junction to
heatsink surface
Rth(c-hs) Contact thermal resistance
Tvj
TOP/Tstg
Fm
Virtual junction temperature
Operating junction/storage
temperature range
Clamping force
Test Conditions
Min.
Double side cooled
Single side cooled
DC
-
Anode DC
-
Cathode DC
-
Clamping force 20.0kN
With mounting compound
Per contact
-
On-state (conducting)
-
-40
18.0
Max. Units
0.018
0.03
0.045
°C/W
°C/W
°C/W
0.006 °C/W
125
°C
125
°C
22.0
kN
2/2
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