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| DFM600LXS12-A000 Datasheet, PDF (3/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module Preliminary Information | |||
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DFM600LXS12-A000
STATIC ELECTRICAL CHARACTERISTICS
Tvj = 25ËC unless stated otherwise.
Symbol
Parameter
Test Conditions
I
Peak reverse current
RM
VF
Forward voltage
L
Inductance
VR = 1200V, Tvj = 125ËC
IF = 600A
I = 600A, T = 125ËC
F
vj
-
DYNAMIC ELECTRICAL CHARACTERISTICS
Tvj = 25ËC unless stated otherwise.
Symbol
Parameter
Irr
Reverse recovery current
Q
Reverse recovery charge
rr
Erec
Reverse recovery energy
Test Conditions
IF = 600A,
dIF/dt = 4500A/µs,
VR = 600V
Tvj = 125ËC unless stated otherwise.
Symbol
Parameter
I
Reverse recovery current
rr
Qrr
Reverse recovery charge
Erec
Reverse recovery energy
Test Conditions
IF = 600A,
dIF/dt = 4200A/µs,
V = 600V
R
Min. Typ. Max. Units
-
-
10 mA
-
1.9
2.2
V
-
2.1
2.4
V
-
15
-
nH
Min. Typ. Max. Units
-
400
-
A
-
100
-
µC
-
40
-
mJ
Min. Typ. Max. Units
-
475
-
A
-
150
-
µC
-
70
-
mJ
3/7
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