DFM600LXS12-A000 Datasheet, PDF (2/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module Preliminary Information

DFM600LXS12-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T_case = 25˚C unless stated otherwise
Symbol
Parameter
V_RRM
I
F
I_FM
I²t
Repetitive peak reverse voltage
Forward current (per arm)
Max. forward current
I²t value fuse current rating
Pmax Maximum power dissipation
V
Isolation voltage
isol
Q_pd
Partial discharge
Test Conditions
T_vj = 125˚C
DC, T_case = 65˚C
T_case = 110˚C, t_p = 1ms
V = 0, t = 10ms, T = 125˚C
R
p
vj
T_case = 25˚C, T_vj = 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V₁ = 1200V, V₂ = 900V, 50Hz RMS
Max. Units
1200 V
600 A
1200 A
100 kA²s
2080 W
4
kV
10 pC
THERMAL AND MECHANICAL RATINGS
Internal insulation:
Baseplate material:
Al O
23
Cu
Creepage distance:
22mm
Clearance:
12mm
CTI (Critical Tracking Index): 175
Symbol
Parameter
R_th(j-c)
Thermal resistance - diode (per arm)
R_th(c-h)
T_j
T
stg
-
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Test Conditions
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
-
-
Mounting - M5
Electrical connections - M5
Min.
-
Typ.
-
Max. Units
48 ˚C/kW
-
-
15 ˚C/kW
-
-
125 ˚C
–40
-
125 ˚C
-
-
5
Nm
-
-
5
Nm
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