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| DFM600FXS12-A000 Datasheet, PDF (3/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module | |||
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SEMICONDUCTOR
STATIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
IRM
Peak reverse current
VF
Forward voltage
LM
Inductance
Test Conditions
VR = 1200V, Tvj = 125°C
IF = 600A
IF = 600A, Tvj = 125°C
-
STATIC ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
LM
Parameter
Module Inductance
(externally connected in parallel)
Test Conditions
-
DYNAMIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
Irr
Peak reverse recovery current
Qrr
Reverse recovery charge
Erec
Reverse recovery energy
Test Conditions
IF = 600A,
dIF/dt = 4500A/µs,
VR = 600V
Tcase = 125°C unless stated otherwise.
Symbol
Parameter
Irr
Peak reverse recovery current
Qrr
Reverse recovery charge
Erec
Reverse recovery energy
Test Conditions
IF = 600A,
dIF/dt = 4200A/µs,
VR = 600V
DFM600FXS12-A000
Min. Typ. Max. Units
-
-
15
mA
-
1.9
2.2
V
-
2.1
2.4
V
-
20
-
nH
Min. Typ. Max. Units
-
15
-
nH
Min. Typ. Max. Units
-
400
-
A
-
100
-
µC
-
40
-
mJ
Min. Typ. Max. Units
-
475
-
A
-
150
-
µC
-
70
-
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
3/7
www.dynexsemi.com
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