DFM600FXS12-A000 Datasheet, PDF (2/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module

SEMICONDUCTOR
DFM600FXS12-A000
ABSOLUTE MAXIMUM RATINGS – PER ARM
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
V_RRM
I_F
I_FM
I²t
P_max
V_isol
Repetitive peak reverse voltage
Forward current (per arm)
Max. forward current
I²t value fuse current rating
Maximum power dissipation
Isolation voltage – per module
Test Conditions
T_vj = 125°C
DC, T_case = 75°C, T _vj = 125°C
T_case =110°C, t _p = 1ms
V_R = 0, t_P = 10ms, T_vj = 125°C
T_case = 25°C, T _vj = 125°C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Max. Units
1200
600
1200
100
2500
2500
V
A
A
kA ²s
W
V
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
Al₂O₃
Copper
32mm
20mm
175
Symbol
R_th(j-c)
R_th(c-h)
T_j
T_stg
-
Parameter
Test Conditions
Min. Typ. Max.
Units
Thermal resistance – diode (per arm) ^{Continuous dissipation –}
-
-
40
°C/kW
junction to case
Thermal resistance – case to heatsink _{Mounting torque 5Nm}
(per module)
(with mounting grease)
-
-
8
°C/kW
Junction temperature
-
-
-
125
°C
Storage temperature range
-
-40
-
125
°C
Screw torque
Mounting – M6
-
-
5
Nm
Electrical connections – M8 -
-
10
Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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