 English |
|
|
|
|
|
|
|
| DFM400XXM65-F000 Datasheet, PDF (3/6 Pages) Dynex Semiconductor – Fast Recovery Dual Diode Module | |||
| |||
| ◁ |
STATIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
IRM Peak reverse current
VF Forward voltage
LM Inductance
Test Conditions
VR = 6500V, Tj = 125°C
IF = 400A
IF = 400A, Tj = 125°C
-
DFM400XXM65-F000
Min Typ Max Units
40 mA
3.6
V
4.1
V
40
nH
STATIC ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
LM
RINT
Parameter
Module inductance
(externally connected in parallel)
Internal resistance (per arm)
Test Conditions
-
-
Min Typ Max Units
20
nH
370
μâ¦
DYNAMIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 400A
VR = 3600V
dIF/dt = 1300A/μs
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 400A
VR = 3600V
dIF/dt = 1600A/μs
Min Typ. Max Units
700
μC
300
A
1300
mJ
Min Typ. Max Units
1000
μC
370
A
2000
mJ
3/6
www.dynexsemi.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese