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DFM400XXM65-F000 Datasheet, PDF (2/6 Pages) Dynex Semiconductor – Fast Recovery Dual Diode Module
DFM400XXM65-F000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF
Forward current (per arm)
IFM Max. forward current
I2t
I2t value fuse current rating
Pmax Max. power dissipation
Visol Isolation voltage – per module
QPD Partial discharge – per module
Test Conditions
Tj = 125°C
Tj = 25°C
Tj = -40°C
DC, Tcase = 75°C, Tj = 125°C
Tcase = 115°C, tp = 1ms
VR = 0, tp = 10ms, Tj = 125°C
Tcase = 25°C, Tj = 125°C
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
IEC1287, V1 = 6900V, V2 = 5100V, 50Hz RMS
Max. Units
6500 V
6300 V
5800 V
400
A
800
A
97
kA2s
3300 W
10200 V
10
pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
56mm
Clearance:
26mm
CTI (Comparative Tracking Index):
> 600
Symbol
Parameter
Rth(j-c)
Rth(c-h)
Tj
Tstg
Thermal resistance (per arm)
Thermal resistance –
case to heatsink (per module)
Junction temperature
Storage temperature range
Screw Torque
Test Conditions
Continuous dissipation –
junction to case
Mounting torque 5Nm
(with mounting grease)
Mounting – M6
Electrical connections – M8
Min Typ. Max Units
-
-
30 °C/kW
-
-
8 °C/kW
-40
-
125
°C
-40
-
125
°C
-
-
5
Nm
-
-
10
Nm
2/6
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