 English |
|
|
|
|
|
|
|
| DFM400XXM45-TS001 Datasheet, PDF (3/6 Pages) Dynex Semiconductor – Fast Recovery Diode Module | |||
| |||
| ◁ |
STATIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
IRM Peak reverse current
VF Forward voltage
LM Inductance
Test Conditions
VR = 4500V, Tj = 125°C
IF = 400A
IF = 400A, Tj = 125°C
-
DFM400XXM45-TS001
Min Typ Max Units
30 mA
2.8
V
3.2
V
40
nH
DYNAMIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise (when used with DIM400XSM45-TS000)
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 400A
VR =2800V
dIF/dt = 1000A/μs
Min Typ. Max Units
450
μC
350
A
750
mJ
Tcase = 125°C unless stated otherwise (when used with DIM400XSM45-TS000)
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 400A
VR = 2800V
dIF/dt = 1000A/μs
Min Typ. Max Units
750
μC
380
A
1250
mJ
3/6
www.dynexsemi.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese