DFM400XXM45-TS001 Datasheet, PDF (2/6 Pages) Dynex Semiconductor – Fast Recovery Diode Module

DFM400XXM45-TS001
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
T_case = 25°C unless stated otherwise
Symbol
Parameter
V_RRM
I_F
I_FM
I²t
Repetitive peak reverse voltage
Forward current (per arm)
Max. forward current
I²t value fuse current rating
P_max Max. power dissipation
V_isol Isolation voltage – per module
Q_PD Partial discharge – per module
Test Conditions
T_j = 125°C
DC, T_case = 65°C
T_case = 115°C, t_p = 1ms
V_R = 0, t_p = 10ms, T_j = 125°C
T_case = 25°C, T_j = 125°C
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
IEC1287, V₁ = 6900V, V₂ = 5100V, 50Hz RMS
Max. Units
4500 V
400
A
800
A
75
kA²s
2080 W
10.2 kV
10
pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
56mm
Clearance:
26mm
CTI (Comparative Tracking Index):
> 600
Symbol
Parameter
R_th(j-c)
R_th(c-h)
T_j
T_stg
Thermal resistance (per arm)
Thermal resistance –
case to heatsink (per module)
Junction temperature
Storage temperature range
Screw Torque
Test Conditions
Continuous dissipation –
junction to case
Mounting torque 5Nm
(with mounting grease)
Mounting – M6
Electrical connections – M8
Min Typ. Max Units
-
-
48 °C/kW
-
-
8 °C/kW
-40
-
125
°C
-40
-
125
°C
-
-
5
Nm
-
-
10
Nm
2/6
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