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| DFM1200FXS12-A000_15 Datasheet, PDF (3/6 Pages) Dynex Semiconductor – Fast Recovery Diode Module | |||
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STATIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
IRM Peak reverse current
VF Forward voltage
LM Inductance
Test Conditions
VR = 1200V, Tj = 125°C
IF = 1200A
IF = 1200A, Tj = 125°C
STATIC ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
LM
Parameter
Module inductance
(externally connected in parallel)
Test Conditions
DYNAMIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 1200A
VR = 600V
dIF/dt = 9000A/μs
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 1200A
VR = 600V
dIF/dt = 8400A/μs
DFM1200FXS12-A000
Min Typ Max Units
30 mA
1.9 2.2
V
2.1 2.4
V
20
nH
Min Typ Max Units
15
nH
Min Typ. Max Units
200
μC
800
A
80
mJ
Min Typ. Max Units
300
μC
920
A
140
mJ
3/7
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