DFM1200FXS12-A000_15 Datasheet, PDF (2/6 Pages) Dynex Semiconductor – Fast Recovery Diode Module

DFM1200FXS12-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
T_case = 25°C unless stated otherwise
Symbol
Parameter
V_RRM
I_F
I_FM
I²t
Repetitive peak reverse voltage
Forward current (per arm)
Max. forward current
I²t value fuse current rating
P_max Max. transistor power dissipation
V_isol Isolation voltage – per module
Test Conditions
T_j = 125°C
DC, T_case = 75°C, T_j = 125°C
T_case = 110°C, t_p = 1ms
V_R = 0, t_p = 10ms, T_j = 125°C
T_case = 25°C, T_j = 125°C
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Max. Units
1200 V
1200 A
2400
200
A
kA²s
5000 W
2500 V
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Al₂O₃
Cu
Creepage distance:
20mm
Clearance:
10mm
CTI (Comparative Tracking Index):
350
Symbol
Parameter
R_th(j-c)
R_th(c-h)
T_j
T_stg
Thermal resistance (per arm)
Thermal resistance –
case to heatsink (per module)
Junction temperature
Storage temperature range
Screw Torque
Test Conditions
Continuous dissipation –
junction to case
Mounting torque 5Nm
(with mounting grease)
Mounting – M6
Electrical connections – M8
Min Typ. Max Units
-
-
20 °C/kW
-
-
8 °C/kW
-
- 125 °C
-40 - 125 °C
-
-
5
Nm
-
-
10 Nm
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