GP801DCS18 Datasheet, PDF (2/10 Pages) Dynex Semiconductor – Chopper Switch Low VCESAT IGBT Module

GP801DCS18
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T_case = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
V_CES
V_GES
I_C
I_C(PK)
P_max
V
isol
Collector-emitter voltage
V = 0V
GE
Gate-emitter voltage
-
Continuous collector current
T_case = 70˚C
Peak collector current
1ms, T = 105˚C
case
Max. transistor power dissipation T = 25˚C, T = 150˚C
case
j
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Max. Units
1800 V
±20
V
800 A
1600 A
6000 W
4000 V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
R_th(j-c)
Thermal resistance - transistor (per arm)
Continuous dissipation -
junction to case
R_th(j-c)
Thermal resistance - diode (per arm)
Continuous dissipation -
junction to case
R_th(c-h)
Thermal resistance - case to heatsink (per module) Mounting torque 5Nm
(with mounting grease)
T
Junction temperature
j
Transistor
Diode
T
Storage temperature range
stg
-
Screw torque
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Min. Max. Units
-
21 ˚C/kW
-
40 ˚C/kW
-
8 ˚C/kW
-
150 ˚C
-
125 ˚C
–40 125 ˚C
-
5
Nm
-
2
Nm
-
10 Nm
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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