GP801DCS18 Datasheet, PDF (1/10 Pages) Dynex Semiconductor – Chopper Switch Low VCESAT IGBT Module

GP801DCS18
FEATURES
s Low V_CE(SAT)
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
s 800A Per Module
GP801DCS18
Chopper Switch Low V_CE(SAT) IGBT Module
DS5235-3.0 January 2001
KEY PARAMETERS
V_CES
V_CE(sat)
I_C
I
C(PK)
(typ)
(max)
(max)
1800V
2.6V
800A
1600A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
s Choppers
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP801DCS18 is an 1800V, n channel enhancement
mode, insulated gate bipolar transistor (IGBT) chopper module.
Designed with low V_CE(SAT) to minimise conduction losses, the
module is of particular relevance in low to medium frequency
applications. The IGBT has a wide reverse bias safe operating
area (RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP801DCS18
Note: When ordering, please use the whole part number.
2(C₂)
7(C¹)
4(E₂)
1(E₁)
3(C₁)
5(E¹)
6(G¹)
Fig. 1 Dual switch circuit diagram
GPxxxDCxxx-xxx
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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