GDU90-20422 Datasheet, PDF (2/4 Pages) Dynex Semiconductor – Gate Drive Unit

GDU 90 20422
TIMING CHARACTERISTICS
Symbol
t *^†
1
t
2
t₃*^†
t₄
t*
5
t₆
t₇
t₈*
t₉
t₁₀
t
11
t
12
Parameter
No response pulse width of
input signal
Delay time emitter
current to receiver o/p
Turn-on delay emitter
current to 10% I_FGM
I pulse width
FGM
Minimum on time
10% I_FGM to 90% I_G(ON)
Receiver storage time
Turn-off delay.
Emitter current to 90% I_G(ON)
Minimum off time
90% I_G(ON) to 10% I_FGM
Delay time
Gate volts to o/p emitter current
Turn-off delay
Gate volts to test receiver o/p
Storage time
Gate volts to o/p emitter current
Turn-on delay
Gate volts to test receiver o/p
Conditions
Adjustable by R81 + R82
-
-
-
Adjustable by R37
-
-
Adjustable by R38
-
-
Measured at low I_GQM
Measured at low I_GQM
Min. Typ. Max. Units
2
-
3
µs
0.4
-
0.8
µs
5.2
-
6.2
µs
-
25
-
µs
80
-
110 µs
0.5
-
0.9
µs
1.5
-
2.3
µs
80
-
110 µs
-
0.1
-
µs
-
0.7
-
µs
-
0.1¹
-
µs
-
0.8¹
-
µs
* t₁,t₃,t₅,t₈ are factory settings. ^† Adjustment of t₁ alters t₃. 1. Varies with I_GQM due to gate lead impedance.
Test circuit
t₁
emitter current
t₂
t₆
Control card
receiver output
10µs
Gate current
dI_FG/dt
t₃
0V
Gate voltage
Control card emitter current
10%
t₄
t₅
Min. ON time
dI_GQ/dt
-8V
t₉
t₇
90% I_G(ON)
Q_GQT
t₈
Min. OFF
-8V
t₁₁
Test circuit receiver output
t₁₀
t₁₂
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