GDU90-20422 Datasheet, PDF (1/4 Pages) Dynex Semiconductor – Gate Drive Unit

GDU 90 20422
GDU 90-20422
Gate Drive Unit
Replaces March 1998 version, DS4566-2.1
DS4566-3.0 January 2000
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
APPLICATIONS
s Used with Gate Turn-Off Thyristors in high current switching
applications
KEY PARAMETERS
I_FGM
I_G(ON)
dI_GQ/dt
30A
7A
40A/µs
CONDITIONS - (UNLESS STATED OTHERWISE)
V₁ = +5V
Test circuit GTO
V₂ = +15V
DG646BH
V₃ = -15V
GDU connection to GTO
500mm CO - AX cable type RC5327230
Test circuit emitter and gate drive emitter
Honeywell sweetspot HFE 4020 - 013
Test circuit emitter current
Test circuit receiver and gate drive receiver
30mA
Honeywell sweetspot HFD 3029 - 002
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
I
+5V PSU current
V1
I_V2
+15V PSU current
I
V3
V_1(Min)
V
2(Min)
V
3(Min)
I_FGM
I_G(ON)
dI /dt
FG
dI /dt
GQ
-15V PSU current
+5V PSU minimum
+15V PSU minimum
-15V PSU minimum
Peak forward gate current
On-state gate current
Rate of rise of positive gate current
Rate of rise of negative gate current
Conditions
700Hz, 50% duty cycle
700Hz
700Hz, I_T = 2000A
GTO T = 125˚C
j
-
-
-
-
-
Measured 10 - 75% I_FGM
I = 2000A, 90% I - 50% I
T
G(ON)
GQM
Min. Typ. Max. Units
-
-
3.80
A
-
-
0.73
A
-
- 9.20 ^A
3.8
-
-
V
14.0
-
-
V
14.0
-
-
V
30
-
-
A
-
7
-
A
-
30
-
A/µs
-
40
-
A/µs
1/4