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MA28151 Datasheet, PDF (16/22 Pages) Dynex Semiconductor – Radiation hard Programmable Communication Interface
MA28151
6. DC CHARACTERISTICS AND RATINGS
Parameter
Supply Voltage
Input Voltage
Current Through Any Pin
Operating Temperature
Storage Temperature
Min
Max Units
-0.5
7
V
-0.3 VDD+0.3
V
-20
+20
mA
-55
125
°C
-65
150
°C
Figure 25: Absolute Maximum Ratings
Note: Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functional operation of the device at these conditions, or at
any other condition above those indicated in the operations
section of this specification, is not implied. Exposure to
absolute maximum rating conditions for extended periods
may affect device reliability.
Total dose radiation not
exceeding 3x105 Rad(SI)
Symbol
Parameter
Conditions
Min Typ Max Units
VDD Supply Voltage
-
VIH
Input High Voltage
-
VIL
Input Low Voltage
-
VOH Output High Voltage
IOH = -2mA
VOL Output Low Voltage
IOL = 5mA
IIN
Input Leakage Current (Note 1)
VDD = 5.5V,
VIN = VSS or VDD
IOZ
Tristate Leakage Current (Note 1)
VDD = 5.5V,
VIN = VSS or VDD
IDD
Power Supply Current
Static, VDD = 5.5V
VDD = 5V±10%, over full operating temperature range.
Mil-Std-883, method 5005, subgroups 1, 2, 3
Note 1: Guaranteed but not tested at -55°C
4.5
5.0
5.5
V
2.2
-
-
V
-
-
0.8
V
VDD-0.5 -
-
V
-
- VSS+0.4 V
-
-
±10 µA
-
-
±50 µA
-
0.1
10
mA
Figure 26: Electrical Characteristics
Subgroup
1
2
3
7
8A
8B
9
10
11
Definition
Static characteristics specified in Figure 26 at +25°C
Static characteristics specified in Figure 26 at +125°C
Static characteristics specified in Figure 26 at -55°C
Functional characteristics specified in Figure 24 at +25°C
Functional characteristics specified in Figure 24 at +125°C
Functional characteristics specified in Figure 24 at -55°C
Switching characteristics specified in Figure 23 at +25°C
Switching characteristics specified in Figure 23 at +125°C
Switching characteristics specified in Figure 23 at -55°C
Figure 27: Definition of Mil-Std-883, Method 5005 Subgroups
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