DMT3205 Datasheet, PDF (2/7 Pages) DIYI Electronic Technology Co., Ltd. – 55V N-Channel Power MOSFET

DMT3205
55V N-Channel Power MOSFET
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
R_θJC
0.75
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=250μA
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
I_DSS
V= _DS=55V,V_GS 0V
I_GSS
V_GS=±= 20V,V_DS 0V
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
V_GS(th)
R_DS(ON)
V_DS=V_GS,I_D=250μA
V_GS=10V, I_D=62A
Min Typ Max Unit
55
-
-
V
-
-
1
μA
-
-
±100
nA
2
3
4
V
-
-
8
mΩ
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
C_lss
- 4900
-
PF
V_DS=25V,V_GS=0V,
C_oss
F=1.0MHz
-
470
-
PF
C_rss
-
460
-
PF
t_d(on)
-
20
-
nS
t_r
V_DD=30V,I_D=2A,R_L=15Ω ,
-
19
-
nS
t_d(off)
R_G=2.5Ω,V_GS=10V
-
70
-
nS
t_f
-
30
-
nS
Q_g
-
125
-
nC
V_DS=30V,I_D=30A,
Q_gs
V_GS=10V
-
24
-
nC
Q_gd
-
49
-
nC
V_SD
= V_GS=0V,I_S 40A
-
-
1.2
V
I_S
-
-
110
A
t_rr
Tj=25℃,I_F=75A,di/dt=100A/μs -
37
-
nS
Qrr
(Note3)
-
58
-
nC
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition：Tj=25℃,V_DD=28V,V_G=10V,L=0.5mH,Rg=25Ω
May.2015-REV.00
www.dyelec.com
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