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DMT3205 Datasheet, PDF (1/7 Pages) DIYI Electronic Technology Co., Ltd. – 55V N-Channel Power MOSFET
DMT3205
55V N-Channel Power MOSFET
● RDS(ON)<8mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Special designed for convertors and power controls
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Green molding compound
Application
● Power switching application
● Hard switched and High frequency circuits
● Uninterruptible power supply
● Case: TO-220 Package
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
55
8.0@ VGS =10V
Block Diagram
D
ID (A)
110
Pin Definition:
1. Gate
2. Drain
3. Source
Ordering Information
Part No.
DMT3205-TU
Package
TO-220
Packing
50pcs / Tube
G
S
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
Limit
55
±20
110
70
390
200
1.6
910
-55 To 155
Unit
V
V
A
A
A
W
W/℃
mJ
℃
May.2015-REV.00
www.dyelec.com
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