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| 3N60 Datasheet, PDF (2/8 Pages) Unisonic Technologies – 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET | |||
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THERMAL DATA
PARAMETER
TO-220/ITO-220
Junction to Ambient
TO-262/TO-263
TO-251/ TO-252
TO-220/TO-262/TO-263
Junction to Case
ITO-220
TO-251/ TO-252
SYMBOL
θJA
θJC
3N60
600V N-Channel Power MOSFET
RATING
62.5
110
1.70
3.70
2.6
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
TEST CONDITIONS
BVDSS VGS = 0V, ID = 250μA
MIN TYP MAX UNIT
600
V
Drain-Source Leakage Current
IDSS
VDS = 600V, VGS = 0V
10 μA
Gate-Source Leakage Current
Forward
Reverse
VGS = 30V, VDS = 0V
IGSS
VGS = -30V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS=10 V, ID=1.5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDD =30V, ID =0.5A,
RG=25⦠(Note 1, 2)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
VDS=50V, ID=1.3 A, IG=100μA
QGS
VGS=10V (Note 1, 2)
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS=0 V, IS=3.0A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
trr
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse widthâ¤300μs, Duty cycleâ¤2%
VGS = 0 V, IS = 3A,
dIF/dt = 100 A/μs (Note 1)
2. Essentially independent of operating temperature
100 nA
-100 nA
2.0
4.0 V
3.6 â¦
350 450 pF
50 65 pF
5.5 7.5 pF
35 50 ns
60 70 ns
100 150 ns
65 75 ns
18.5 23 nC
5.2 - nC
4.9 - nC
1.4 V
3.0 A
12 A
210
ns
1.2
μC
May,2015-REV.00
www.dyelec.com
2/8
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