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3N60 Datasheet, PDF (1/8 Pages) Unisonic Technologies – 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
● RDS(ON) < 3.6Ω@ VGS = 10V, ID =1.5A
● Fast switching capability
● Lead free in compliance with EU RoHS directive.
● Improved dv/dt capability, high ruggedness
3N60
600V N-Channel Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
600
3.6 @ VGS =10V
Current
3A
● Case: TO-251,TO-252,TO-220,ITO-220
TO-262,TO-263 Package
Ordering Information
Part No.
DMP3N60-TU
DMD3N60-TR
DMD3N60-TU
DMT3N60-TU
DMF3N60-TU
DMK3N60-TU
DMG3N60-TU
DMG3N60-TU
Package
TO-251
TO-252
TO-252
TO-220
ITO-220
TO-262
TO-263
TO-263
Packing
75pcs / Tube
2.5Kpcs / 13” Reel
75pcs / Tube
50pcs / Tube
50pcs / Tube
50pcs / Tube
50pcs / Tube
800pcs / 13" Reel
Pin Definition:
1. Gate
2. Drain
3. Source
Block Diagram
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
VDSS
600
Gate-Source Voltage
VGSS
±30
Avalanche Current (Note 2)
Continuous Drain Current
IAR
3.0
ID
3.0
Pulsed Drain Current (Note 2)
IDM
12
Avalanche Energy
Single Pulsed (Note 3)
EAS
200
UNIT
V
V
A
A
A
mJ
TO-220/TO-262/TO-263
75
W
Power Dissipation
ITO-220
PD
34
W
TO-251/TO-252
50
W
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
°C
TOPR
-55 ~ +150
°C
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L = 44.4mH, IAS=3A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
May,2015-REV.00
www.dyelec.com
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