RGP10AZ Datasheet, PDF (2/2 Pages) Diode Semiconductor Korea – FAST RECOVERY RECTIFIERS

Diode Semiconductor Korea
RGP10A(Z) - - - RGP10M(Z)
FIG.1 -- FORWARD DERATING CURVE
FIG.2--PEAK FORWORD SURGE CURRENT
1.0
.8
.6
.4
Single Phase
.2
Half Wave 60HZ
Resistive or
Inductive Load
0.375"(9.5mm) LeadLength
0
0 25 50 75 100 125 150 175 200
30
25
20
15
TJ=125
1 0 _{8.3msSingleHalf}
Sine-Wave
5
0
12
4
10 20 40
100
AMBIENT TEMPERATURE,
FIG.3--TYPICAL FORWORD CHARACTERISTIC
NUMBER OF CYCLES AT 60 Hz
FIG.4 --REVERSE CURRENT VS REVERSE VOTAGE
10
2.0
TJ=25
Pulse Width=300µS
1.4
1.2
1.0
0.4
0.1
0.04
0
0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
10
T J-2 5
1.0
TJ -7 5
0.1
T J-1 00
0.01
0 20 40 60 80 1 0 0 120 140
REVERSE VOLTAGE,VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 -- TYPICAL JUNCTION CAPACITANCE
100
50
20
10
TJ=25
f=1MHZ
5
2
1
0.1 0.2 0.4 1 2 4 10 20 40 100
REVERSE VOLTAGE,VOLTS
FIG.6 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
N.1.
N.1.
trr
1cm
+0.5A
(+)
50VDC
(APPROX)
(-)
D.U.T.
1
N.1.
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(+)
0
-0.25A
NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
-1.0A
SET TIME BASE FOR 50/100 ns /cm
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