RGP10AZ Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – FAST RECOVERY RECTIFIERS

Diode Semiconductor Korea _{RGP10A(Z)---RGP10M(Z)}
FAST RECOVERY RECTIFIERS
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces0.39 grams
Mounting position: Any
DO - 15
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
Dimensions in millimeters
RGP
10A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
V_RRM
50
V_RMS
35
V_DC
50
I_F(AV)
8.3ms single half-sine-w ave
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 1.0 A
I_FSM
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE:1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
RGP
10B
100
70
100
RGP
10D
200
140
200
RGP
10G
400
280
400
1.0
RGP
10J
600
420
600
RGP
10K
800
560
800
RGP
10M
1000
700
1000
UNITS
V
V
V
A
30.0
1.3
10.0
200.0
150
250
15
50
- 55---- + 150
- 55---- + 150
A
V
A
500
ns
pF
̼ͤ
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