M1 Datasheet, PDF (2/2 Pages) Won-Top Electronics – 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER

Diode Semiconductor Korea
M1---M7
FIG.1 -- FORWARD DERATING CURVE
1.2
Resistive or
inductive Load
1.0
0.8
0.6
0.4
0.2X0.2(5.0X5.0mm)
THICK COPPERPAND
AREAS
0.2
0
0
20 40
60
80
100 120 140 160
AMBIENT TEMPERATURE
FIG.2 PEAK FORWARD SURGE CURRENT
100
30
10
TL = 11 0 ^OC
8.3m s Single Half S ine W ave
(JEDEC Method)
1
1
10
100
NUMBER OF CYCLES AT 60Hz
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
100
10
TJ=25^OC
1
0.1
Puise Width=300 S
1%DUTY CYCLE
0.01
0.4 0.6 0.8 1.0. 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
100
10
1
0.1
0.01
0.001
0
TJ=125^OC
TJ=75 ^OC
TJ=25^OC
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,
FIG.5-TYPICAL JUNCTION CAPACITANCE
100
10
TJ=25 ⁰C
f=1.0MHZ
Vsig=50mVp-p
1
0.01
0.1
1
10
100
REVERSE VOLTAGE,VOLTS
FIG.6-TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
UNITS MOUNTED on
0.20x0.20''(5.0X5.0mm)X0.5mil
INCHES(0.013mm)
THICK COPPERLAND AREAS
0.1
1
10
100
PULSE DURATON,SEC
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