GBU15A Datasheet, PDF (2/2 Pages) Galaxy Semi-Conductor Holdings Limited – SILICON BRIDGE RECTIFIERS

Diode Semiconductor Korea
GBU15A --- GBU15M
FIG.1 -- DERATING CURVE FOR OUTPUT RRECTIFIED CURRENT
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
24
21
18
15
12
9
6
3
00
50
100
150
TEMPERATURE,
FIG.3 -- MAXIMUM NON-REPETITIVE PEAK FORWARD
DURGE CURRENT
250
200
150
TJ=TJ max.
SINGLE SINE-WAVE
(JEDEC METHOD)
100
50
0
1
10
100
NUMBER OF CYCLES AT 60Hz
FIG.5 -- TYPICAL JUNCTION CAPACITANCE PER LEG
100
10
1.0
TJ=25
Pulse Width
=300uS
0.1
.01
0.2 0.4 0.6
0.8 1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
500
100
TJ=150
TJ=125
10
5 0 -4 0 0 V
6 0 0 -1 0 0 0 V
1 .0
0 .1
.0 1
0
TJ=25
20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE
FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE
1000
200
100
TJ=25
f=1.0 MHz
VSIG=50mVp-p
50-400V
600-1000V
10
.1
1
4
10
100
REVERSE VOLTAGE, VOLTS
100
10
1
.1.01
.1
1
10
100
t, HEATING TIME, sec.
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