GBU15A Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SILICON BRIDGE RECTIFIERS

Diode Semiconductor Korea GBU15A --- GBU15M
SILICON BRIDGE RECT IFIERS
FEATURES
Ideal for printed circuit board
Reliable low cos t cons truction utilizing m olded
plas tic technique
Plas tic m aterrial has U/L flam m ability clas s ification
94V-O
Mounting pos ition: Any
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 15.0 A
GBU
22.3± 0.3
3.7± 0.35
4 45°
3.8± 0.2
-
AC
+
2.5± 0.2
2.4± 0.2
1.2± 0.15
5.0± 0.3
0.5± 0.15
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
GBU GBU GBU GBU GBU GBU
15A 15B 15D 15G 15J 15K
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard Tc=100
output current
V_RRM 50
V_RMS 35
V_DC 50
I_{F (AV)}
100 200 400 600 800
70
140 280 420 560
100 200 400 600 800
15.0
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
I_{F SM}
240.0
Maximum instantaneous f orw ard voltage
at 7.5 A
V_F
1.0
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=125
I_R
5.0
500.0
Typical junction capacitance per leg (note 3)
C_J
211
94
Typical thermal resistance per leg (note 2)
R_{θJ A}
21.0
(note 1)
R_{θJ C}
2.2
Operating junction temperature range
T_J
- 55 ---- + 150
Storage temperature range
T_STG
- 55 ---- + 150
N OTE: 1. Unit case m ounted on 3.2x3.2x0.12" thick (6.2x8.2x0.3cm ) AI. Plate.
2. U nits m ounted in f ree air, no heat sink on P.C .B., 0.5x0.5"(12x12m m ) copper pads, 0.375"(9.5m m ) lead length.
3. Measured at 1.0 MH z and applied rev erse v oltage of 4.0 v olts.
GBU
15M
1000
700
1000
UNITS
V
V
V
A
A
V
μA
mA
pF
/W
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