ERD03-02 Datasheet, PDF (2/2 Pages) Galaxy Semi-Conductor Holdings Limited – PLASTIC SILICON RECTIFIER

Diode Semiconductor Korea
ERD03-02---ERD03-04
FIG.1 -- TYPICAL FORWARD CHARACTERISTIC
10
1.0
TJ=25⁰ C
Pulse Width
=300us
0.1
.01
0.4
0.6 0.8
1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.2 -- TYPICAL JUNCTION CHARACTERISTICS
100
60
40
20
10
4
TJ=25
f=1MHz
2
1
.1 .2 .4 1.0
24
10 20 40 100
REVERSE VOLTAGE,VOLTS
FIG.3 -- FORWARD DERATING CURVE
6
5
4
3
Single Phase
Half Wave 60H Z
2
Resistive or
Inductive Load
1
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE,
FIG.4 -- PEAK FORWARD SURGE CURRENT
200
150
100
TJ=125
8.3ms Single Half
Sine-Wave
50
0
1
2 8 4 2 10
100
NUMBER OF CYCLES AT 60Hz
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