ERD03-02 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – PLASTIC SILICON RECTIFIER

Diode Semiconductor Korea ERD03-02---ERD03-04
PLASTIC SILICON RECTIFIER
VOLTAGE RANGE: 200 --- 400 V
CURRENT: 3.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
DO - 27
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
Dimensions in millimeters
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 3.0 A
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Typical junction capacitance (Note1)
C_J
Typical thermal resistance
(Note2)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
ERD03
-02
200
140
200
3.0
ERD03
-04
400
280
400
200.0
1.0
10.0
100.0
35
20
-55----+150
-55----+150
UNITS
V
V
V
A
A
V
A
pF
̼ͤ
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