ERB37-08 Datasheet, PDF (2/2 Pages) Galaxy Semi-Conductor Holdings Limited – FAST RECOVERY RECTIFIER

Diode Semiconductor Korea
ERB37-08---ERB37-10
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
trr
50
10
N.1.
N.1.
+0.5A
(+)
50VDC
(APPROX)
(-)
D.U.T.
1
N.1.
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(+)
0
-0.25A
-1.0A
NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF
SETTIMEBASEFOR50/100ns /cm
1cm
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
FIG.2 --TYPICAL FORWARD CHARACTERISTIC
FIG.3 -- FORWARD DERATING CURVE
100
10
TJ=25
Pulse Width=300uS
4
2
1.0
0.4
0.1
0.04
0.01
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.4--TYPICAL JUNCTION CAPACITANCE
1.5
1.25
1.0
0.75
0.5
S in gle P hase
H a lf W a ve 60 H Z
R e sistive o r
Inductive Load
0.25
0
25
50
75 100
125
150 175
AMBIENT TEMPERATURE.
FIG.5--PEAK FORWARD SURGE CURRENT
10
16
14
12
10
4
TJ=25
f=1MHz
2
1
.1 .2 .4
1.0 2
4
10 20 40
100
REVERSE VOLTAGE,VOLTS
40
TJ=125
8.3ms Single Half
30
Sine-Wave
20
10
0
1
2
4
8 10 2 0
40 60 80 100
NUMBER OF CYCLES AT 60Hz
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