ERB37-08 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – FAST RECOVERY RECTIFIER

Diode Semiconductor Korea ^{ERB37-08---ERB37-10}
FAST RECOVERY RECT IFIERS
VOLT AGE RANGE: 800--1000 V
CURRENT: 1.0 A
FEATURES
Low cos t
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries U/L recognition 94V-0
MECHANICAL DATA
Cas e:JEDEC DO-41,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces ,0.34 gram s
Mounting pos ition: Any
DO - 41
Dimensions in millimeters
MAXIMUM RAT INGS AND ELECT RICAL CHARACT ERIST ICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 H z,res is tive or inductive load. For capacitive load,derate by 20% .
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@ T_A =7 5
Peak f orw ard surge current
V_RRM
V_{R MS}
V_DC
I_{F (A V)}
8.3ms single half -sine-w ave
superimposed on rated load @T_J=125
Maximum instantaneous f orw ard voltage
@ 1.0 A
I_{F S M}
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
Operating junction temperature range
R_θJA
T_J
Storage temperature range
T_STG
N OTE:1. Meas ured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MH _Z and applied rev erse v oltage of 4.0V D C .
3. Therm al res istanc e f rom junction to am bient.
E RB 37-08
800
560
800
1 .0
E RB 37-10
1000
700
1000
UNITS
V
V
V
A
3 0 .0
1 .5
5 .0
1 0 0 .0
250
12
55
-55----+150
-55----+150
A
V
A
ns
pF
/W
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