DB3M Datasheet, PDF (2/2 Pages) Changzhou Shunye Electronics Co.,Ltd. – SILICON BIDIRECTIONAL DIACS

Diode Semiconductor Korea
DB3M.DB4M
FIG.1--VOLTAGE-CURRENT CHARACTERISTIC CURVE
+IF
10mA
IBO
IB
-V
0.5VBO
+V
FIG.2--TEST CIRCUIT FOR OUTPUT VOLTAGE
220V
60Hz
10K
500K
D.U.T
0.1µ F
Vo
R=20
VBO
-IF
FIG.3-- TEST CIRCUIT SEE FIG.2 ADJUST R FOR IP=0.5A
90%
IP
10%
tr
FIG.4--POWER DISSIPATION VERSUS AMBIENT
TEMPERATURE (MAXIMUM VALUES)
P(mW)
160
140
120
100
80
60
40
20
Tamb( )
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
FIG.5--RELATIVE VARIATION OF VBO VERSUS JUNCTION
TEMPERATURE(TYPICAL VALUES)
VBO(TJ)
1.08 ^{VBO(TJ=25 )}
1.06
1.04
TJ( )
1.02
1.00
25
50
75
100
125
FIG.6--PEAK PULSEE CURRENT VERENT VERSUS
PULSE DURATION(MAXIMUM VALUES)
ITRM(A)
2
1
f=100Hz
TJ initial=25
0.1
tp(µ s)
0.01
10
100
1000
10000
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