DB3M Datasheet, PDF (1/2 Pages) Changzhou Shunye Electronics Co.,Ltd. – SILICON BIDIRECTIONAL DIACS

Diode Semiconductor Korea
DB3M.DB4M
SILICON BIDIRECTIONAL DIACS
VOLTAGE RANGE: 28-45 V
FEATURES
The three layer,two termnal,hermetically sealed diacs
are designed specifically for triggering thyristors.
They demonstrate low break over current at break
over voltage as they withstand peak pulse current,
The breakover symmetry is within three volts(DB6).
These diacs are intended for use in thyrisitors
phase control,circuits for lamp dimming,universal
motor speed control,and heat control.
MINI-MELF
Cathode indification
3.4 +0.3
-0.1
0.4 0.1
Dimensions in millimeters
ABSOLUTE RATINGS
Parameters
Symbols
DB3M,DB4M
UNITS
Power dissipation on printed
T_A=50^oC
Pc
Repetitive peak on-state tp=20 S
current
f=120Hz
I_TRM
Operating junction temperature
Storage temperature
T_J
T_STG
150.0
mW
2.0
A
-40--- +125
o_C
-40--- +125
o_C
ELECTRICAL CHARACTERISTICS
Parameters
Test Conditions
Breakover voltage (NOTE 1)
Min
V_BO
C=22nf(NOTE 2)
See FIG.1
Typ
Max
Breakover voltage symmetry
Dynamic breakover voltage (NOTE 1)
I+V_BO I-
I-V_BOI
I± VI
C=22nf(NOTE 2)
See FIG.1
Max
I=(I_BO to I_F=10mA)
See FIG.1
Min
Output voltage (NOTE 1)
V_o
See FIG.2
Min
Breakover current (NOTE 1)
Rise time (NOTE 1)
Leakage current (NOTE 1)
I_BO
C=22nf(NOTE 2)
Max
t_r
See FIG.3
Typ
I_R
V_R=0.5 V_BO
See FIG.1
Max
NOTE: 1. Electrical characteristics applicable in both forw ard and reverse dirctions.
2. Connected in parallel w ith the devices
DB3M DB4M UNITS
28
35
32
40
V
36
45
±3.0
V
5.0
V
5.0
V
100.0
A
1.5
S
10.0
A
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