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| BAS40W Datasheet, PDF (2/3 Pages) NXP Semiconductors – Schottky barrier double diodes | |||
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Diode Semiconductor Korea
Surface Mount Schottky Barrier Diode BAS40W/-04/-05/-06
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
V(BR)R
IR
VF
CD
Test conditions
IR= 10μA
VR=30V
IF=1.0mA
IF=40mA
VR=0V f=1MHz
MIN MAX UNIT
40
V
200
nA
380
mV
1000
5
pF
Reverse recovery time
trr
IF=IR=10mA RL=100â¦
5
nS
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
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