BAS40W Datasheet, PDF (1/3 Pages) NXP Semiconductors – Schottky barrier double diodes

Diode Semiconductor Korea
Surface Mount Schottky Barrier Diode BAS40W/-04/-05/-06
FEATURES
z Low Forward voltage drop.
z Fast switching.
Pb
Lead-free
z Ultra-small surface mount package.
z PN junction guard ring for transient
and ESD protection.
BAS40W
BAS40-04
BAS40W-05
BAS40W-06
APPLICATIONS
z For general purpose switching applications.
ORDERING INFORMATION
Type No.
Marking
BAS40W
43
BAS40W-04
44
BAS40W-05
45
BAS40W-06
46
SOT-323
Package Code
SOT-323
SOT-323
SOT-323
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
RMS Reverse voltage
Repetitive Peak reverse voltage
Working peak reverse voltage
Diode reverse voltage
Forward continuous Current
Non-Repetitive peak forward surge Current
@t=1μs
V_R(RMS)
V_RRM
V_RWM
V_R
I_F
I_FS
Power Dissipation
P_d
Junction temperature
T_j
Storage temperature range
T_stg
Limits Unit
28
V
40
V
200
mA
600
mA
200
mW
150
℃
-65-+150 ℃
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