1N4933GL Datasheet, PDF (2/2 Pages) Diode Semiconductor Korea – GLASS PASSIVATED JUNCTIONS

Diode Semiconductor Korea
1N4933G L- - -1N4937GL
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N.1.
(+)
50VDC
(APPROX)
(-)
D.U.T.
1
N.1.
10
N.1.
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(+)
NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M . 22PF
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=50
trr
+0.5A
0
-0.25A
-1.0A
SETTIMEBASEFOR50/100 ns /cm
FIG.2 --FORWARD CURRENT DERATING CURVE
FIG.3 --PEAK FORWARD SURGE CURRENT
1.0
Single Phase
Half Wave 50HZ
0.8
Resistive or
Inductive Load
0.6
0.4
0.2
0
0
25
50
75
100 125
150 175
LEAD TEMPERATURE,
FIG.4--TYPICAL FORWARD CHARACTERISTIC
20
10
1.0
TJ=25
PULSE WIDTH=300 s
0.1
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
30
24
TJ=25
8.3ms Single Half
18
Sine-Wave
12
6
0
12
46
10
20
40 60 100
NUMBER OF CYCLES AT 60 Hz
FIG.4--TYPICAL JUNCTION CAPACITANCE
20
16
14
12
10
4
TJ=25
f=1MHz
2
1
.1 .2 .4
1.0 2 4
10 20 40
100
FORWARD VOLTAGE,VOLTS
REVERSE VOLTAGE,VOLTS
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