1N4933GL Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – GLASS PASSIVATED JUNCTIONS

Diode Semiconductor Korea 1N4933GL---1N4937GL
GLASS PASSIVATED JUNCTIONS
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 1.0 A
FEATURES
Low cost
Glass passivated junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohil,Is opropanop
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC A-405,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.008 ounces,0.23 grams
Mounting position: Any
A - 405
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
Dimensions in millimeters
1N
4933GL
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
V_RRM
50
V_RMS
35
V_DC
50
I_F(AV)
8.3ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@1.0 A
V_F
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_R
Maximym reverse capacitance (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A I_R=1A I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
1N
4934GL
100
70
100
1N
4935GL
200
140
200
1.0
1N
4936GL
400
280
400
30.0
1.3
5.0
100.0
200
12.0
22.0
- 55---- +175
- 55---- + 175
1N
4937GL
600
420
600
UNITS
V
V
V
A
A
V
A
ns
pF
/W
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