2N7002_16 Datasheet, PDF (2/3 Pages) Diotech Company. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Voltage - 60 Volts Drain Curreent - 115 mAmps
● ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
Characteristic
Symbol
Min
● OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10µAdc)
V _(BR)DSS
60
Zero Gate Voltage Drain Current
(V_GS = 0, V_DS = 60 Vdc)
TJ = 25 °C
TJ = 125 °C
I_DSS
–
–
Gate–Body Leakage Current, Forward
(V_GS = 20 Vdc)
I_GSSF
–
Gate–Body Leakage Current, Reverse
(V_GS = – 20 Vdc)
I_GSSR
–
● ON CHARACTERISTICS (Note 2.)
Gate ThresholdVoltage
(V_DS = V_GS, I_D = 250µAdc)
V _GS(th)
1.0
On–State Drain Current
(V_DS ≥ 2.0 V_DS(on), V_GS = 10 Vdc)
Static Drain–Source On–State Voltage
(V_GS = 10 Vdc, ID = 500 mAdc)
(V_GS = 5.0 Vdc, I_D = 50 mAdc)
Static Drain–Source On–State Resistance
(V_GS = 10 V, ID= 500 mAdc) T_C= 25°C
T_C = 125°C
(V_GS = 5.0 Vdc,I_D = 50 mAdc) T_C = 25°C
T_C = 125°C
I_D(on)
V _DS(on)
r_DS(on)
500
–
–
–
–
–
–
Forward Transconductance
(V_DS ≥ 2.0 V_DS(on), I_D = 200 mAdc)
g _FS
80
● ^{DYNAMIC CHARACTERISTICS}
Input Capacitance
(VDS = 25 Vdc, V_GS = 0, f = 1.0 MHz)
C _iss
–
Output Capacitance
(V_DS = 25 Vdc, V_GS = 0, f = 1.0 MHz)
C _oss
–
Reverse Transfer Capacitance
(V_DS = 25 Vdc, V_GS = 0, f = 1.0 MHz)
C _rss
–
● SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(V _DD = 25 Vdc , I_D 500 mAdc,
R_G = 25 Ω, R_L = 50 Ω, V_gen = 10 V)
t _d(on)
–
t _d(off)
–
● ^{BODY–DRAIN DIODE RATINGS}
Diode Forward On–Voltage
(I_S = 115 mAdc, V_GS = 0 V)
V _SD
–
Source Current Continuous
(Body Diode)
I_S
–
Source Current Pulsed
2. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤2.0%.
I_SM
–
Typ
Max
Unit
–
–
Vdc
–
1.0 µAdc
–
500
–
1
µAdc
–
-1
µAdc
1.6
2
Vdc
–
–
mA
Vdc
–
3.75
–
0.375
Ohms
1.4
7.5
–
13.5
1.8
7.5
–
13.5
–
–
mmhos
17
50
pF
10
25
pF
2.5
5.0
pF
7
20
ns
11
40
ns
–
–1.5 Vdc
–
–115 mAdc
–
–800 mAdc