2N7002_16 Datasheet, PDF (1/3 Pages) Diotech Company. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Voltage - 60 Volts Drain Curreent - 115 mAmps
FEATURES
● Low On-Resistance: RDS(ON)
● Low Gate Threshold Voltage
● Low Input Capacitance
● Fast Switching Speed
● Low Input/Output Leakage
● ESD Protected :1000V
MECHANICAL DATA
● Case: SOT-23, Molded Plastic
● Case Material - UL Flammability Rating
Classification 94V-0
● Terminals: Solderable per MIL-STD-202,
Method 208
● Marking: Device Code
● Weight: 0.008 grams (approx.)
A
D
TOP VIEW
BC
G
S
E
D
G
H
K
J
L
SOT-23
Dim Min Max
A
0.37 0.51
B
1.19 1.40
C
2.10 2.50
D
0.89 1.05
E
0.45 0.61
G
1.78 2.05
H
2.65 3.05
J 0.013 0.15
M
K
0.89 1.10
L
0.45 0.61
M 0.076 0.178
All Dimensions in mm
● MAXIMUM RATING (Ta = 25℃)
Rating
Symbol
Drain–Source Voltage
V _DSS
Drain–Gate Voltage (RGS = 1.0 MΩ)
V _DGR
Drain Current
I_D
– Continuous T_C = 25°C (Note 1.)
I_D
– ContinuousT_C = 100°C (Note 1.)
I_DM
– Pulsed (Note 2.)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤50 µs)
V _GS
V _GSM
Value
60
60
± 115
± 75
± 800
± 20
± 40
Unit
V dc
V dc
mAdc
Vdc
Vpk
●THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation FR–5 Board
(Note 3.) T_A = 25 °C
Derate above 25°C
P_D
225
mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient R_θJA
Total Device Dissipation
P_D
Alumina Substrate,(Note 4.) T_A= 25°C
Derate above 25°C
556 °C/W
300
mW
mW/°C
2.4
Thermal Resistance, Junction to Ambient R_θJA
Junction and Storage Temperature
T_J, T_stg
417
-55 to
+150
°C/W
°C
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width≤300 µs, Duty Cycle≤2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Simplified Schematic
Gate 1
Source 2
3 Drain
(Top View)