US1A-Q_13 Datasheet, PDF (2/2 Pages) Diotec Semiconductor – Ultrafast Switching Surface Mount Silicon Rectifier Diodes

120
[%]
100
80
60
40
20
I_FAV
0
0 T_T 50
100
150 [°C]
Rated forward current vs. temp. of the terminals
Zul. Richtstrom in Abh. v. d. Temp. der Terminals
10
I_FRM
[A]
1
T_T = 100°C
T_T = 125°C
0,1
0,1
1
t_p [ms]
10
Rep. Peak Forward Current vs pulse duration
Periodischer Spitzenstrom über Pulsdauer
120
[ns]
100
-di_F/dt = 50A/µs
-di_F/dt = 200A/µs
80
60
T_j = 125°C
40
T_j = 25°C
20
t_rr
0
0 I_F 0.5
1
1.5 [A] 2
Typical reverse recovery time versus I_F
Typische Sperrverzugszeit in Abhängigkeit von I_F
10
[A]
1
US1J-Q
0.1
US1J-Q
10^-2
I_F
10^-3
T_j = 25°C
V_F
[V]
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
12
[A]
10
8
I_FAV
6
0.5x I_FAV
4
2x I_FAV
2
T_j = 25°C
T_j = 125°C
I_RM
0
0 50 -di_F/dt 200
300 [A/µs]
Typical reverse recovery current versus -di_F/dt
Typische Rückstromspitze in Abhängigkeit von -di_F/dt
2
http://www.diotec.com/
© Diotec Semiconductor AG