TIP125_07 Datasheet, PDF (2/2 Pages) Diotec Semiconductor – Si-Epitaxial Planar Darlington Power Transistors

TIP125 ... TIP127
Characteristics (Tj = 25°C)
Collector-Emitter saturation volt. – Kollektor-Emitter-Sättigungsspg. ²)
- IC = 3 A, IB = 12 mA
- IC = 5 A, IB = 20 mA
Base-Emitter voltage – Basis-Emitter-Spannung ²)
- VCEsat
- VCEsat
- IC = 3 A, - VCE = 3 V
- VBE
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
- VCE = 30 V, (B open)
- VCE = 40 V, (B open)
- VCE = 50 V, (B open)
TIP125
TIP126
TIP127
- ICEO
- ICEO
- ICEO
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 60 V, (E open)
- VCB = 80 V, (E open)
- VCB = 100 V, (E open)
TIP125
TIP126
TIP127
- ICBO
- ICBO
- ICBO
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V_CB = 10 V, I_E = i_e = 0, f = 100 kHz
C_CB0
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
RthC
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
M4
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Equivalent
Circuit
–
Ersa
tzschaltbild T1
T2
E
B
C
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
–
–
2V
–
–
4V
–
–
2.5 V
–
–
500 nA
–
–
500 nA
–
–
500 nA
–
–
200 nA
–
–
200 nA
–
–
200 nA
–
–
200 pF
< 63 K/W ¹)
< 3 K/W
9 ± 10% lb.in.
1 ± 10% Nm
TIP120 ... TIP122
C2
B1
T2
T1
E2
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
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