TIP125_07 Datasheet, PDF (1/2 Pages) Diotec Semiconductor – Si-Epitaxial Planar Darlington Power Transistors

TIP125 ... TIP127
TIP125 ... TIP127
PNP
Si-Epitaxial Planar Darlington Power Transistors
Si-Epitaxial Planar Darlington-Leistungs-Transistoren
Version 2006-10-17
10^±0.2
Max. power dissipation with cooling
Max. Verlustleistung mit Kühlung
3.8
4
Type
Typ
123
Collector current
Kollektorstrom
Plastic case
Kunststoffgehäuse
Weight approx.
1.5
Gewicht ca.
0.9
Plastic material has UL classification 94V-0
2.54
Gehäusematerial UL94V-0 klassifiziert
Dimensions - Maße [mm]
1 = B 2/4 = C 3 = E
Standard packaging in tubes
Standard Lieferform in Stangen
PNP
65 W
5A
TO-220AB
2.2 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spg.
Collector-Base-voltage – Kollektor-Basis-Spg.
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
without cooling – ohne Kühlung
with cooling – mit Kühlung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Base current – Basisstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
TA = 25°C
TC = 25°C
- VCEO
- VCBO
- VEBO
Ptot
Ptot
- IC
- ICM
- IB
Tj
TS
Grenzwerte (TA = 25°C)
TIP125 TIP126 TIP127
60 V
80 V
100 V
60 V
80 V
100 V
5V
2 W ¹)
65 W
5A
8A
120 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis ²)
- IC = 0.5 A, - VCE = 3 V
- IC = 3 A, - VCE = 3 V
Small signal current gain – Kleinsignal-Stromverstärkung
- IC = 3 A, - VCE = 4 V, f = 1 MHz
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
hFE
1000
–
–
hFE
1000
–
–
hfe
4
1 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
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