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TIP125A Datasheet, PDF (2/2 Pages) Diotec Semiconductor – Si-Epitaxial PlanarTransistors | |||
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Darlington Transistors
TIP125, TIP126, TIP127
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Emitter-Base cutoff current â Emitterreststrom
IC = 0, - VEB = 5 V
- IEB0
â
Collector saturation voltage â Kollektor-Sättigungsspg. 1)
â
2 mA
- IC = 3 A, - IB = 12 mA
- IC = 5 A, - IB = 20 mA
- VCEsat
â
- VCEsat
â
Base-Emitter on-voltage â Basis-Emitter-Spannung 1)
â
2V
â
4V
- IC = 3 A, - VCE = 3 V
- VBEon
â
DC current gain â Kollektor-Basis-Stromverhältnis 1)
â
2.5 V
- VCE = 3 V, - IC = 0.5 A
- VCE = 3 V, - IC = 3 A
hFE
1000
â
â
hFE
1000
â
â
Small signal current gain â Kleinsignal-Stromverstärkung
- VCE = 4 V, - IC = 3 A, f = 1 MHz
hfe
4
â
â
Collector-Base Capacitance â Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 100 kHz
CCB0
â
Thermal resistance â Wärmewiderstand
junction to ambient air â Sperrschicht zu umgebender Luft
junction to case â Sperrschicht zu Gehäuse
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
â
200 pF
RthA
62.5 K/W 2)
RthC
2 K/W
M 4 9 ± 10% lb.in.
1 ± 10% Nm
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
TIP120, TIP121, TIP122
Equivalent Circuit â Ersatzschaltbild
B1
C2
T1
T2
E2
1) Tested with pulses tp = 300 µs, duty cycle ⤠2% â Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ⤠2%
2) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die AnschluÃdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
2
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