TIP125A Datasheet, PDF (1/2 Pages) Diotec Semiconductor – Si-Epitaxial PlanarTransistors

TIP125, TIP126, TIP127
Darlington Transistors
PNP
Version 2004-07-01
1 = B1 2 = C2 3 = E2
Si-Epitaxial PlanarTransistors
PNP
Si-Epitaxial PlanarTransistoren
Collector current – Kollektorstrom
5A
Plastic case
Kunststoffgehäuse
TO-220AB
Weight approx. – Gewicht ca.
2.2 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T_A = 25°C)
Collector-Emitter-voltage
B open
- V_CE0
Collector-Base-voltage
E open
- V_CB0
Emitter-Base-voltage
C open
- V_EB0
Power dissipation – Verlustleistung
without cooling – ohne Kühlung
P_tot
with cooling – mit Kühlung
T_C = 25°C P_tot
Collector current – Kollektorstrom (dc)
- I_C
Peak Collector current – Kollektor-Spitzenstrom - I_CM
Base current – Basisstrom (dc)
- I_B
Junction temperature – Sperrschichttemperatur T_j
Storage temperature – Lagerungstemperatur
T_S
Grenzwerte (T_A = 25°C)
TIP125 TIP126 TIP127
60 V
80 V
100 V
60 V
80 V
100 V
50 V
2 W ¹)
65 W
5A
8A
120 mA
- 65…+ 150°C
- 65…+ 150°C
Characteristics (T_j = 25°C)
Collector-Emitter cutoff current – Kollektorreststrom
I_B = 0, - V_CE = 30 V
I_B = 0, - V_CE = 40 V
I_B = 0, - V_CE = 50 V
TIP125
TIP126
TIP127
- I_CE0
- I_CE0
- I_CE0
Collector-Base cutoff current – Kollektorreststrom
I_E = 0, - V_CB = 60 V
I_E = 0, - V_CB = 80 V
I_E = 0, - V_CB = 100 V
TIP125
TIP126
TIP127
- I_CB0
- I_CB0
- I_CB0
Kennwerte (T_j = 25°C)
Min.
Typ.
Max.
–
–
500 nA
–
–
500 nA
–
–
500 nA
–
–
200 nA
–
–
200 nA
–
–
200 nA
1_{) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case}
Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
1