PB1000_07 Datasheet, PDF (2/2 Pages) Diotec Semiconductor – Silicon-Bridge-Rectifiers Silizium-Br-kengleichrichter

Characteristics
Max. current with cooling fin 300 cm²
Dauergrenzstrom mit Kühlblech 300 cm²
Forward voltage
Durchlass-Spannung
Leakage current
Sperrstrom
Isolation voltage terminals to case
Isolationsspannung Anschlüsse zum Gehäuse
Thermal Resistance Junction – Case
Wärmewiderstand Sperrschicht – Gehäuse
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
TA = 50°C
Tj = 25°C
Tj = 25°C
PB1000 ... PB1010, PB1000S ... PB1010S
R-load
IFAV
C-load
IF = 5 A
VF
Kennwerte
10.0 A
8.0 A
< 1.2 V ¹)
VR = VRRM
IR
< 10 µA
VISO
> 2500 V
RthC
< 3.3 K/W
M4
9 ± 10% lb.in
1 ± 10% Nm
120
[%]
100
80
60
40
20
I_FAV
0
0 T_A 50
100
150 [°C]
Rated forward current vs. ambient temperature
Zul. Richtstrom in Abh. von der Umgebungstemp.
10²
[A]
T_j = 125°C
10
T_j = 25°C
1
10^-1
I_F
10^-2
150a-(5a-1.2v)
0.4 V_F 0.8 1.0 1.2 1.4 [V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
1 Per diode – Pro Diode
2
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