MMBT3904 Datasheet, PDF (2/2 Pages) NXP Semiconductors – NPN switching transistor

MMBT3904
Characteristics (Tj = 25°C)
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung ²)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
Base-Emitter saturation voltage – Basis-Sättigungsspannung ²)
VCEsat
VCEsat
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VBEsat
VBEsat
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCE = 30 V, VEB = 3 V
ICBX
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- VCE = 30 V, - VEB = 3 V
IEBV
Gain-Bandwidth Product – Transitfrequenz
IC = 10 mA, VCE = 20 V, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 5 V, IE = ie = 0, f = 1 MHz
CCBO
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEBO
Noise figure – Rauschzahl
VCE = 5 V, IC = 1 µA, RG = 1 kΩ, f = 1 kHz
F
Switching times – Schaltzeiten (between 10% and 90% levels)
delay time
rise time
VCC = 3 V, VBE = 0.5 V
td
IC = 10 mA, IB1 = 1mA
tr
storage time
fall time
VCC = 3 V, IC = 10 mA,
ts
IB1 = IB2 = 1 mA
tf
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking - Stempelung
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
–
–
0.2 V
–
–
0.3 V
0.65 V
–
0.85 V
–
–
0.95 V
–
–
50 nA
–
–-
50 nA
300 MHz
–
–
–
–
4 pF
–
–
8 pf
–
–
5 dB
–
–
35 ns
–
–
35 ns
–
–
200 ns
–
–
50 ns
< 200 K/W ¹)
MMBT3906
MMBT3904 = 1AM
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm² copper pad at each terminal
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluss
2
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