MMBT2907 Datasheet, PDF (2/2 Pages) Samsung semiconductor – PNP (GENERAL PURPOSE TRANSISTOR)

Switching Transistors
MMBT2907, MMBT2907A
Characteristics (T_j = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis ¹)
- V_CE = 10 V, - I_C = 0.1 mA
MMBT2709
MMBT2709A
h_FE
h_FE
- V_CE = 10 V, - I_C = 1 mA
MMBT2709 h_FE
MMBT2709A h_FE
- V_CE = 10 V, - I_C = 10 mA
MMBT2709 h_FE
MMBT2709A h_FE
- V_CE = 10 V, - I_C = 500 mA
MMBT2709
MMBT2709A
h_FE
h_FE
- V_CE = 10 V, - I_C = 150 mA
h_FE
Gain-Bandwidth Product – Transitfrequenz
- V_CE = 20 V, - I_C = 50 mA, f = 100 MHz
f_T
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V_CB = 10 V, I_E = i_e = 0, f = 1 MHz
C_CB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- V_EB = 2 V, I_C = i_c = 0, f = 1 MHz
C_EB0
Noise figure – Rauschzahl
- V_CE = 10 V, - I_C = 100 µA, R_S = 1 kΩ,
f = 10 Hz...15.7 kHz
F
Switching times – Schaltzeiten
turn-on time
delay time
rise time
- V_CC = 30 V, - V_BE = 1.5 V
- I_C = 150 mA, - I_B1 = 15 mA
t_on
t_d
t_r
turn-off time
storage time
fall time
- V_CC = 30 V, - I_C = 150 mA
- I_B1 = - I_B2 =15 mA
t_off
t_s
t_f
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Kennwerte (T_j = 25°C)
Min.
Typ.
Max.
35
–
–
75
–
–
50
–
–
100
–
–
75
–
–
100
–
–
30
–
–
50
–
–
100
–
300
200 MHz
–
–
–
–
8 pF
–
–
30 pF
–
4 dB
–
–
–
45 ns
–
–
10 ns
–
–
40 ns
–
–
100 ns
–
–
80 ns
–
–
30 ns
R_thA
420 K/W ²)
MMBT2222, MMBT2222A
Marking - Stempelung
MMBT2907A = 2F MMBT2907 = (M)2B
1_{) Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%}
2_{) Mounted on P.C. board with 3 mm}2 _{copper pad at each terminal}
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluß
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