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MMBT2222A Datasheet, PDF (2/2 Pages) NXP Semiconductors – NPN switching transistor | |||
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MMBT2222A
Characteristics (Tj = 25°C)
Collector-Emitter saturation voltage â Kollektor-Sättigungsspannung 2)
IC = 150 mA, IB = 15 mA
MMBT2222A VCEsat
IC = 500 mA, IB = 50 mA
MMBT2222A VCEsat
Base-Emitter saturation voltage â Basis-Sättigungsspannung 2)
IC = 150 mA, IB = 15 mA
MMBT2222A VBEsat
IC = 500 mA, IB = 50 mA
MMBT2222A VBEsat
Collector-Base cutoff current â Kollektor-Basis-Reststrom
VCB = 60 V, (E open)
MMBT2222A ICBO
VCB = 60 V, Tj = 125°C, (E open)
MMBT2222A ICBO
Emitter-Base cutoff current â Emitter-Basis-Reststrom
VEB = 3 V, (C open)
MMBT2222A IEB0
Gain-Bandwidth Product â Transitfrequenz
VCE = 20 V, IC = 20 mA, f = 100 MHz
fT
Collector-Base Capacitance â Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
CCBO
Emitter-Base Capacitance â Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEBO
Noise figure â Rauschzahl
VCE = 10 V, IC = 100 µA, RG = 1 kΩ, f = 1 kHz MMBT2222A F
Switching times â Schaltzeiten (between 10% and 90% levels)
delay time
rise time
VCC = 3 V, VBE = 0.5 V
td
IC = 150 mA, IB1 = 15mA
tr
storage time
fall time
VCC = 3 V, IC = 150 mA,
ts
IB1 = IB2 = 15 mA
tf
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht â umgebende Luft
RthA
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking - Stempelung
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
â
â
0.3 V
â
â
1.0 V
0.65 V
â
â
â
1.2 V
2.0 V
â
â
10 nA
â
â
10 µA
â
â-
100 nA
250 MHz
â
â
â
â
8 pF
â
â
25 pf
â
â
4 dB
â
â
10 ns
â
â
25 ns
â
â
225 ns
â
â
60 ns
< 420 K/W 1)
MMBT2709A
MMBT2222A = 1P
2 Tested with pulses tp = 300 µs, duty cycle ⤠2% â Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ⤠2%
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
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