MMBT2222 Datasheet, PDF (2/2 Pages) Samsung semiconductor – NPN (GENERAL PURPOSE TRANSISTOR)

Switching Transistors
MMBT2222, MMBT2222A
Characteristics (T_j = 25°C)
Base saturation voltage – Basis-Sättigungsspannung ¹)
I_C = 150 mA, I_B = 15 mA
MMBT2222
MMBT2222A
V_BEsat
V_BEsat
I_C = 500 mA, I_B = 50 mA
MMBT2222
MMBT2222A
V_BEsat
V_BEsat
DC current gain – Kollektor-Basis-Stromverhältnis ¹)
V_CE = 10 V, I_C = 0.1 mA
h_FE
V_CE = 10 V, I_C = 1 mA
h_FE
V_CE = 10 V, I_C = 10 mA
h_FE
V_CE = 10 V, I_C = 150 mA
h_FE
V_CE = 1 V, I_C = 150 mA
h_FE
V_CE = 10 V, I_C = 500 mA
h_FE
h-Parameters at V_CE = 10V, f = 1 kHz, I_C = 1 mA / 10 mA ²)
Small signal current gain
MMBT2222
h_fe
Kleinsignal-Stromverstärkung MMBT2222A h_fe
Input impedance
Eingangs-Impedanz
MMBT2222
h_ie
MMBT2222A h_ie
Output admittance
Ausgangs-Leitwert
MMBT2222
h_oe
MMBT2222A h_oe
Gain-Bandwidth Product – Transitfrequenz
V_CE = 10 V, I_C = 10 mA, f = 100 MHz
f_T
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V_CB = 10 V, I_E = i_e = 0, f = 1 MHz
C_CB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
V_EB = 0.5 V, I_C = i_c = 0, f = 1 MHz
C_EB0
Noise figure – Rauschzahl
V_CE = 10 V, I_C = 100 µA,
R_S = 1 kΩ, f = 1 kHz
MMBT2222A
F
Switching times – Schaltzeiten
delay time
rise time
V_CC = 30 V, - V_BE = 0.5 V
t_d
I_C = 150 mA, I_B1 = 15 mA
t_r
storage time
V_CC = 30 V, I_C = 150 mA
t_s
fall time
I_B1 = - I_B2 = 15 mA
t_f
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Kennwerte (T_j = 25°C)
Min.
Typ.
Max.
–
–
600 mV
–
–
–
–
–
1.3 V
1.2 V
2.6 V
2V
35
–
–
50
–
–
75
–
–
100
–
300
50
–
–
40
–
–
50
–
300
75
–
375
2 kΩ
–
8 kΩ
0.25 kΩ
–
1.25 kΩ
5 µS
25 µS
–
35 µS
–
200 µS
250 MHz
–
–
–
4 pF
8 pF
–
20 pF
25 pF
–
–
4 dB
–
–
10 ns
–
–
25 ns
–
–
225 ns
–
–
60 ns
R_thA
420 K/W ³)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
MMBT2907, MMBT2907A
Marking - Stempelung
MMBT2222 = (M)1B
MMBT2222A = 1P
1_{) Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%}
2_{) MMBT2222: IC = 1 mA, MMBT2222A: IC = 10 mA}
3_{) Mounted on P.C. board with 3 mm}2 _{copper pad at each terminal}
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluß
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